Number: 402624
Features of DEVELOPING MACINE EG 750: Processor with automatic dosing Automatic maintenance of solution temperature. Convenient control via touch screen The DEVELOPING MACINE EG 750 has a standby mode and recognizes the sheet at input.
Number: 402573
RIP316-SXT Super-Speed Large Format Raster Photoplotter Has the following characteristics: – one optical head SDH3 with 512 laser beams and light intensity equalizer – settable resolutions: 6 µm, 3 µm, 2 µm and 1.5 µm – for the metric model 4000 dpi, 8000 dpi, 12000 dpi and 16000 dpi – for the Imperial model – […]
Number: 402565
High-precision installation with automatic alignment of photomasks Accutray Olec AT-30. Bilateral optical alignment by fiducial marks using 4 movable video cameras; Double-sided exposure of soldermask, outer and inner layers in one machine without the need for reconfiguration; Characteristics of Accutray Olec AT-30: Alignment accuracy ± 5 µm; Positioning accuracy ± 2 µm; Repeatability ± 2 […]
Number: 402560
High-precision installation with automatic alignment of photomasks Accutray Olec AT-30. Bilateral optical alignment by fiducial marks using 4 movable video cameras; Double-sided exposure of soldermask, outer and inner layers in one machine without the need for reconfiguration; Characteristics of Accutray Olec AT-30: Alignment accuracy ± 5 µm; Positioning accuracy ± 2 µm; Repeatability ± 2 […]
Number: 17270
Cleanliness class ISO7. Autonomous climate control. Automatic vestibule at the entrance.
The exposure process occurs when the photoresist is exposed to light or ultraviolet light through a template with the desired pattern using an optical lens system, or without a pattern, where the pattern is formed by moving a laser or electron beam focused on the surface of the photoresist.
The main parameters of exposure: wavelength, exposure time, power of the radiation source. It is important to choose the right parameters so that there are no problems with the manifestation of the photoresist, and the performance of the plants depends on the power of these parameters.
